View TISP7260F3D_3291287.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp7xxxf3 (mv, hv) overvoltage protector series tisp7125f3 thru tisp7180f3, tisp7240f3 thru tisp7380f3 medium & high-voltage triple element bidirectional thyristor overvoltage protectors device symbol sl package (top view) device v drm v v (bo) v 7125f3 100 125 7150f3 120 150 7180f3 145 180 7240f3 180 240 7260f3 200 260 7290f3 220 290 7320f3 240 320 7350f3 275 350 7380f3? 270 380 ? for new designs use 7350f3 instead of 7380f3 waveshape standard i tsp a 2/10 gr-1089-core 190 8/20 iec 61000-4-5 175 10/160 fcc part 68 110 10/700 fcc part 68 itu-t k.20/21 70 10/560 fcc part 68 50 10/1000 gr-1089-core 45 patented ion-implanted breakdown region - precise dc and dynamic voltages planar passivated junctions - low off-state current.................................<10 a rated for international surge wave shapes - single and simultaneous impulses how to order description d package (top view) the tisp7xxxf3 series are 3-point overvoltage protectors designed for protecting against metallic (differential mode) and simultaneous longitudinal (common mode) surges. each terminal pair has the same voltage limiting values and surge current capability. this terminal pair surge capability ensures that the protector can meet the simultaneous longitudinal surge require- ment which is typically twice the metallic surge requirement. ............................................... ul recognized component 1 2 3 45 6 7 8 g nu nu g nc t r nc md1xab 1 2 3 t g r g t r sd7xab terminals t, r and g correspond to the alternative line designators of a, b and c *rohs directive 2002/95/ec jan 27 2003 including annex device package carrier ti s p 7x xxf3 d , s m al l - out l i n e t ape and reel ti s p 7xx x f3dr t ube ti s p 7x xxf3d tisp7xxxf3 sl, single-in-line tube tisp7xxxf3sl ti s p 7xx x f3dr-s ti s p 7x xxf3d-s tisp7xxxf3sl-s for standard termination finish order as for lead free termination finish order as * r o h s c o m p l i a n t v e r s i o n s a v a i l a b l e nc - no internal connection. nu - non-usable; no external electrical connection should be made to these pins. specified ratings require connection of pins 5 and 8.
march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. description (continued) tisp7xxxf3 (mv, hv) overvoltage protector series absolute maximum ratings, t a = 25 c (unless otherwise noted) each terminal pair has a symmetrical voltage-triggered thyristor characteristic. overvoltages are initially clipped by breakdow n clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. this low-voltage on s tate causes the current resulting from the overvoltage to be safely diverted through the device. the high crowbar holding current prevents d.c. latchup as the diverted current subsides.these protectors are guaranteed to voltage limit and withstand the listed lightning surges in both po larities. these medium and high voltage devices are offered in nine voltage variants to meet a range of battery and ringing voltage requi rements. they are guaranteed to suppress and withstand the listed international lightning surges on any terminal pair. similar devices with w orking voltages of 58 v and 66 v are detailed in the tisp7072f3, tisp7082f3 data sheet. rating symbol value unit repetitive peak off-state voltage, 0 c < t a < 70 c 7125f3 7150f3 7180f3 7240f3 7260f3 7290f3 7320f3 7350f3 7380f3 v drm 100 120 145 180 200 220 240 275 270 v non-repetitive peak on-state pulse current (see notes 1 and 2) i ppsm a 1/2 (gas tube differential transient, 1/2 voltage wave shape) 330 2/10 (telcordia gr-1089-core, 2/10 voltage wave shape) 190 1/20 (itu-t k.22, 1.2/50 voltage wave shape, 25 ? resistor) 100 8/20 (iec 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 175 10/160 (fcc part 68, 10/160 voltage wave shape) 110 4/250 (itu-t k.20/21, 10/700 voltage wave shape, simultaneous) 95 0.2/310 (cnet i 31-24, 0.5/700 voltage wave shape) 70 5/310 (itu-t k.20/21, 10/700 voltage wave shape, single) 70 5/320 (fcc part 68, 9/720 voltage wave shape, single) 70 10/560 (fcc part 68, 10/560 voltage wave shape) 50 10/1000 (telcordia gr-1089-core, 10/1000 voltage wave shape) 45 non-repetitive peak on-state current, 0 c < t a < 70 c (see notes 1 and 3) 50 hz, 1 s d package sl package i tsm 4.3 7.1 a initial rate of rise of on-state current, linear current ramp, maximum ramp value < 38 a di t /dt 250 a/ s junction temperature t j -65 to +150 c storage temperature range t stg -65 to +150 c notes: 1. 2. see thermal information for derated i ppsm values 0 c < t a < 70 c and applications information for details on wave shapes. 3. above 70 c, derate i tsm linearly to zero at 150 c lead temperature. initially, the tisp device must be in thermal equilibrium at the specified t . the impulse may be repeated after the tisp device returns to its initial conditions. the rated current values may be applied either to the r to g or to the t to g or to the t to r terminals. additionally, both r to g and t to g may have their rated current values applied simultaneously (in this case the to tal g terminal current will be twice the above rated current values). a
march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. electrical characteristics for all terminal pairs, t a = 25 c (unless otherwise noted) parameter test conditions min typ max unit i drm repetitive peak off- state current v d =v drm , 0 c march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. parameter measurement information tisp7xxxf3 (mv, hv) overvoltage protector series figure 1. voltage-current characteristic for t and r terminals t and g and r and g measurements are referenced to the g terminal t and r measurements are referenced to the r terminal -v v drm i drm v d i h i tsm i tsp v (bo) i (bo) i d quadrant i switching characteristic +v +i v (bo) i (bo) v drm i drm v d i d i h i tsm i tsp -i quadrant iii switching characteristic pmxxaaa
march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. typical characteristics - r and g, or t and g terminals tisp7xxxf3 (mv, hv) overvoltage protector series figure 2. figure 3. figure 4. figure 5. t j - junction temperature - c t j - junction temperature - c t j - junction temperature - c -25 0 25 50 75 100 125 150 i d - off-s ma tate current - 0?01 0?1 0? 0?01 0?1 0? 1 10 100 tc7mac v d = -50 v v d = 50 v -25 0 25 50 75 100 125 150 i d - off-state current - 1 10 100 tc7hac v d = -50 v v d = 50 v -25 0 25 50 75 100 125 150 0.9 1.0 1.1 1.2 tc7mae v (bo) v (br) v (br)m positive polarity normalized to v (br) i (br) = 1 ma and 25 c t j - junction temperature - c 1 ma and 25 c -25 0 25 50 75 100 125 150 normalized breakdown voltages 0.9 1.0 1.1 1.2 tc7hae v (bo) v (br) v (br)m positive polarity normalized to v (br) i (br) = tisp7125f3 thru tisp7180f3 off-state current vs junction temperature tisp7240f3 thru tisp7380f3 off-state current vs junction temperature normalized breakdown voltages vs junction temperature normalized breakdown voltages vs junction temperature ma 1 ma and 25 c normalized breakdown voltages
march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. typical characteristics - r and g, or t and g terminals tisp7xxxf3 (mv, hv) overvoltage protector series figure 6. figure 7. figure 8. figure 9. t j - junction temperature - c -25 0 25 50 75 100 125 150 0.9 1.0 1.1 1.2 tc7maf v (bo) v (br) v (br)m negative polarity normalized to v (br) i (br) = 1 ma and 25 c junction temperature - c t j - -25 0 25 50 75 100 125 150 0.9 1.0 1.1 1.2 tc7haf v (bo) v (br) v (br)m negative polarity normalized to v (br) i (br) v t - on-state voltage - v 23456789 110 10 i t - on-state current - a 1 10 100 tc7mal positive polarity v t - on-state voltage - v 23456789 1 i t - on-state current - a 1 10 100 tc7hal 150 c positive polarity tisp7125f3 thru tisp7180f3 normalized breakdown voltages vs junction temperature tisp7240f3 thru tisp7380f3 normalized breakdown voltages vs junction temperature on-state current vs on-state voltage on-state current vs on-state voltage = 1 ma and 25 c 25 c 25 c -40 c -40 c 150 c normalized breakdown voltages normalized breakdown voltages
march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. typical characteristics - r and g, or t and g terminals tisp7xxxf3 (mv, hv) overvoltage protector series figure 10. figure 11. figure 12. figure 13. v t - on-state voltage - v 23456789 110 i t - on-state current - a 1 10 100 tc7mam -40 c 150 c negative polarity v t - on-state voltage - v 23456789 110 i t - on-state current - a 1 10 100 tc7ham negative polarity t j - junction temperature - c t j - junction temperature - c -25 0 25 50 75 100 125 150 i h , i (bo) - holding current, breakover current - a 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.1 1.0 -25 0 25 50 75 100 125 150 i h , i (bo) - holding current, breakover current - a 0?6 0?7 0?8 0?9 0? 0? 0? 0? 0? 0? 0? 0? 0? 1? tc7hah i h +i (bo) -i (bo) tisp7125f3 thru tisp7180f3 on-state current vs on-state voltage tisp7240f3 thru tisp7380f3 on-state current vs on-state voltage holding current & breakover current holding current & breakover current vs junction temperature 25 c -40 c 150 c 25 c
march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. typical characteristics - r and g, or t and g terminals tisp7xxxf3 (mv, hv) overvoltage protector series figure 14. figure 15. figure 16. figure 17. 0?01 0?1 0? 0?01 0?1 0? 1 10 100 1.0 1.1 1.2 tc7mau positive negative di/dt - rate of rise of principle current - a/ s di/dt - rate of rise of principle current - a/ s 1 10 100 1.0 1.1 1.2 tc7hau positive negative 10 100 1000 maximum surge current - a maximum surge current - a 10 100 1000 tc7maa 2 decay time - s decay time - s 10 100 1000 10 100 1000 tc7haa 2 tisp7125f3 thru tisp7180f3 normalized breakover voltage vs rate of rise of principle current tisp7240f3 thru tisp7380f3 normalized breakover voltage vs rate of rise of principle current surge current vs decay time surge current vs decay time normalized breakdown voltage normalized breakdown voltage
march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. typical characteristics - r and t terminals tisp7xxxf3 (mv, hv) overvoltage protector series figure 18. figure 19. figure 20. figure 21. t j - junction temperature - c t j - junction temperature - c t j - junction temperature - c t j - junction temperature - c -25 0 25 50 75 100 125 150 i d - off-state current - a i d - off-state current - a 0?01 0?1 0? 1 10 100 tc7mad -25 0 25 50 75 100 125 150 0?01 0?1 0? 1 10 100 tc7had -25 0 25 50 75 100 125 150 0.9 1.0 1.1 1.2 tc7mag v (bo) v (br) v (br)m -25 0 25 50 75 100 125 150 normalized breakdown voltages normalized breakdown voltages 0.9 1.0 1.1 1.2 tc7hag v (bo) v (br) v (br)m tisp7125f3 thru tisp7180f3 off-state current vs junction temperature tisp7240f3 thru tisp7380f3 off-state current vs junction temperature normalized breakdown voltages vs junction temperature normalized breakdown voltages vs junction temperature
march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp7xxxf3 (mv, hv) overvoltage protector series typical characteristics - r and t terminals figure 22. figure 23. figure 24. figure 25. v t - on-state voltage - v 23456789 110 i t - on-state current - a 1 10 100 tc7mak -40 c 150 c 25 c v t - on-state voltage - v 23456789 110 i t - on-state current - a 1 10 100 tc7hak -40 c 150 c 25 c t j - junction temperature - c t j - junction temperature - c -25 0 25 50 75 100 125 150 i h , i (bo) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.1 1.0 tc7maj i h i (bo) -25 0 25 50 75 100 125 150 i h , i (bo) - holding current, breakover current - a - holding current, breakover current - a 0?6 0?7 0?8 0?9 0? 0? 0? 0? 0? 0? 0? 0? 0? 1? tc7haj i h i (bo) tisp7125f3 thru tisp7180f3 on-state current vs on-state voltage tisp7240f3 thru tisp7380f3 on-state current vs on-state voltage holding current & breakover current vs junction temperature holding current & breakover current vs junction temperature
march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp7xxxf3 (mv, hv) overvoltage protector series typical characteristics - r and t terminals figure 26. figure 27. di/dt - rate of rise of principle current - a/ s 0?01 0?1 0? 1 10 100 di/dt - rate of rise of principle current - a/ s 0?01 0?1 0? 1 10 100 normalized breakover voltage normalized breakover voltage 1.0 1.1 1.2 tc7mav 1.0 1.1 1.2 tc7hav tisp7125f3 thru tisp7180f3 normalized breakover voltage vs rate of rise of principle current tisp7240f3 thru tisp7380f3 normalized breakover voltage vs rate of rise of principle current
march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp7xxxf3 (mv, hv) overvoltage protector series thermal information figure 28. figure 29. figure 30. figure 31. t - current duration - s 0? 1 10 100 1000 i trms - maximum non-recurrent 50 hz current - a 1 10 ti7maa v gen = 250 vrms r gen = 10 to 150 ? d package sl package t - current duration - s 0? 1 10 100 1000 i trms - maximum non-recurrent 50 hz current - a 1 10 ti7haa d package sl package v gen = 350 vrms r gen = 20 to 250 t - power pulse duration - s 0?001 0?01 0?1 0? 0?001 0?01 0?1 0? 1 10 100 1000 z ja - transient thermal impedance - c/w - transient thermal impedance - c/w 1 10 100 d package ti7mab sl package t - power pulse duration - s 1 10 100 1000 z ja 1 10 100 d package ti7mab sl package tisp7125f3 thru tisp7180f3 maximum non-recurring 50 hz current vs current duration tisp7240f3 thru tisp7380f3 maximum non-recurring 50 hz current vs current duration thermal response thermal response ?
march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. thermal information tisp7xxxf3 (mv, hv) overvoltage protector series r ating symbol value unit non-repetitive peak on-state pulse current, 0 c < t a < 70 c (see notes 5, 6 and 7) i ppsm a 1/2 (gas tube differential transient, 1/2 voltage wave shape) 320 2/10 (telcordia gr-1089-core, 2/10 voltage wave shape) 175 1/20 (itu-t k.22, 1.2/50 voltage wave shape, 25 ? resistor) 90 8/20 (iec 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 150 10/160 (fcc part 68, 10/160 voltage wave shape) 90 4/250 (itu-t k.20/21, 10/700 voltage wave shape, dual) 70 0.2/310 (cnet i 31-24, 0.5/700 voltage wave shape) 65 5/310 (itu-t k.20/21, 10/700 voltage wave shape, single) 65 5/320 (fcc part 68, 9/720 voltage wave shape) 65 10/560 (fcc part 68, 10/560 voltage wave shape) 45 10/1000 (telcordia gr-1089-core, 10/1000 voltage wave shape) 40 notes: 5. 6. see applications information for details on wave shapes. 7. above 70 c, derate i ppsm linearly to zero at 150 c lead temperature. initially, the tisp device must be in thermal equilibrium at the specified t . the impulse may be repeated after the tisp device returns to its initial conditions. the rated current values may be applied either to the r to g or to the t to g or to the t to r terminals. additionally, both r to g and t to g may have their rated current values applied simultaneously (in this case the to tal g terminal current will be twice the above rated current values). a
march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. there are three categories of surge generator type: single wave shape, combination wave shape and circuit defined. single wave shape generators have essentially the same wave shape for the open circuit voltage and short circuit current (e.g. 10/1000 open circu it voltage and short circuit current). combination generators have two wave shapes, one for the open circuit voltage and the other for the sho rt circuit current (e.g. 1.2/50 open circuit voltage and 8/20 short circuit current). circuit specified generators usually equate to a combination generator, although typically only the open circuit voltage wave shape is referenced (e.g. a 10/700 open circuit voltage generator typical ly produces a 5/ 310 short circuit current). if the combination or circuit defined generators operate into a finite resistance, the wave shape p roduced is interme- diate between the open circuit and short circuit values. most lightning tests, used for equipment verification, specify a unidirectional sawtooth waveform which has an exponential rise and an exponential decay. wave shapes are classified in terms of rise time in microseconds and a decay time in microseconds to 50 % of the maximum amplitude. the notation used for the wave shape is rise time/decay time , without the microseconds quantity and the ??between the two values has no mathematical significance. a 50 a, 5/310 waveform would have a peak current value of 50 a, a rise time of 5 s and a decay time of 310 s. the tisp surge current graph comprehends the wave shapes of commonly used surges. deployment wave shape notation generators itu-t 10/700 generator applications information lightning surge tisp7xxxf3 (mv, hv) overvoltage protector series these devices are three terminal overvoltage protectors. they limit the voltage between three points in the circuit. typically, this would be the two line conductors and protective ground (figure 32) . in figure 32, protective functions th2 and th3 limit the maximum voltage between each conductor and ground to their respective v (bo) values. protective function th1 limits the maximum voltage between the two conductors to its v (bo) value. this circuit defined generator is specified in many standards. the descriptions and values are not consistent between standards and it is important to realize that it is always the same generator being used. figure 33 shows the 10/700 generator circuit defined in itu-t recommendation k.20 (10/96) ?esistibility of telecommunication s witching equipment to overvoltages and overcurrents? the basic generator comprises of: capacitor c 1 , charged to voltage v c , which is the energy storage element switch sw to discharge the capacitor into the output shaping network shunt resistor r 1 , series resistor r 2 and shunt capacitor c 2 form the output shaping network series feed resistor r 3 to connect to one line conductor for single surge series feed resistor r 4 to connect to the other line conductor for dual surging in the normal single surge equipment test configuration, the unsurged line is grounded. this is shown by the dotted lines in th e top drawing of figure 33. however, doing this at device test places one terminal pair in parallel with another terminal pair. to check the ind ividual terminal pairs of the tisp7xxxf3, without any paralleled operation, the unsurged terminal is left unconnected. figure 32. multi-point protection th3 th2 th1
march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. applications information itu-t 10/700 generator (continued) lightning surge (continued) tisp7xxxf3 (mv, hv) overvoltage protector series with the generator output open circuit, when sw closes, c 1 discharges through r 1 . the decay time constant will be c 1 r 1 , or 20 x 50 = 1000 s. for the 50 % voltage decay time, the time constant needs to be multiplied by 0.697, giving 0.697 x 1000 = 697 s which is rounded to 700 s. the output rise time is controlled by the time constant of r 2 and c 2 , which is 15 x 200 = 3000 ns or 3 s. virtual voltage rise times are given by straight line extrapolation through the 30 % and 90 % points of the voltage waveform to zero and 100 %. mathematically, this is equivalent to 3.24 times the time constant, which gives 3.24 x 3 = 9.73 which is rounded to 10 s. thus, the open circuit voltage rises in 10 s and decays in 700 s, giving the 10/700 generator its name. when the overvoltage protector switches, it effectively shorts the generator output via the series 25 ? resistor. two short circuit conditions need to be considered: single output using r 3 only (top circuit of figure 33) and dual output using r 3 and r 4 (bottom circuit of figure 33). for the single test, the series combination of r 2 and r 3 (15 + 25 = 40 ? ) is in shunt with r 1 . this lowers the discharge resistance from 50 ? to 22.2 ? , giving a discharge time constant of 444 s and a 50% current decay time of 309.7 s, which is rounded to 310 s. for the rise time, r 2 and r 3 are in parallel, reducing the effective source resistance from 15 ? to 9.38 ? , giving a time constant of 1.88 s. virtual current rise times are given by straight line extrapolation through the 10 % and 90 % points of the current waveform to zero and 100 %. mathematically, this is equivalent to 2.75 times the time constant, which gives 2.75 x 1.88 = 5.15, which is rounded to 5 s. thus, the short circuit current rises in 5 s and decays in 310 s, giving the 5/310 wave shape. the series resistance from c 1 to the output is 40 ? , giving an output conductance of 25 a/kv. for each 1 kv of capacitor charge voltage, 25 a of output current will result. for the dual test, the series combination of r 2 plus r 3 and r 4 in parallel (15 + 12.5 = 27.5 ? ) is in shunt with r 1 . this lowers the discharge resistance from 50 ? to 17.7 ? , giving a discharge time constant of 355 s and a 50% current decay time of 247 s, which is rounded to 250 s. for the rise time, r 2 , r 3 and r 4 are in parallel, reducing the effective source resistance from 15 ? to 6.82 ? , giving a time constant of 1.36 s, which gives a current rise time of 2.75 x 1.36 = 3.75, which is rounded to 4 s. thus, the short circuit current rises in 4 s and decays in 250 s, giving the 4/250 wave shape. figure 33. c 2 200 nf r 1 50 ? c 1 20 f r 2 15 ? sw v c 2.8 kv r 3 25 ? r t t g t r g r g t and g test r and g test r and t test 70 a 5/310 70 a 5/310 10/700 generator - single terminal pair test c 2 200 nf r 1 50 ? c 1 20 f r 2 15 ? sw r 3 25 ? r 4 25 ? r t g dual t and g, r and g test 95 a 4/250 95 a 4/250 190 a 4/250 v c 5.2 kv 10/700 generator - dual terminal pair test
march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. applications information itu-t 10/700 generator (continued) lightning surge (continued) 1.2/50 generators tisp7xxxf3 (mv, hv) overvoltage protector series the series resistance from c 1 to an individual output is 2 x 27.5 = 55 ? , giving an output conductance of 18 a/kv. for each 1 kv of capacitor charge voltage, 18 a of output current will result. at 25 c, these protectors are rated at 70 a for the single terminal pair condition and 95 a for the dual condition (r and g terminals and t and g terminals). in terms of generator voltage, this gives a maximum generator setting of 70 x 40 = 2.8 kv for the single conditio n and 2 x 95 x 27.5 = 5.2 kv for the dual condition. the higher generator voltage setting for the dual condition is due to the current wavefor m decay being shorter at 250 s compared to the 310 s value of the single condition. other itu-t recommendations use the 10/700 generator: k.17 (11/88) ?ests on power-fed repeaters using solid-state devices in o rder to check the arrangements for protection from external interference?and k.21(10/96) ?esistibility of subscribers terminal to ov ervoltages and overcurrents? k.30 (03/93) ?ositive temperature coefficient (ptc) thermistors? several iec publications use the 10/700 generator; common ones are iec 6100-4-5 (03/95) ?lectromagnetic compatibility (emc) - part 4: testing and measurement techniques - section 5: surge immunity test?and iec 60950 (04/ 99) ?afety of information technology e quipment? the iec 60950 10/700 generator is carried through into other ?50?derivatives. europe is harmonized by cenelec (comit? europ?e n de normalization electro-technique) under en 60950 (included in the low voltage directive, ce mark). us has ul (underwriters labor atories) 1950 and canada csa (canadian standards authority) c22.2 no. 950. fcc part 68 ?onnection of terminal equipment to the telephone network?(47 cfr 68) uses the 10/700 generator for type b surge testing. part 68 defines the open circuit voltage wave shape as 9/720 and the short circuit current wave shape as 5/320 for a single out put. the current wave shape in the dual (longitudinal) test condition is not defined, but it can be assumed to be 4/250. several vde publications use the 10/700 generator, for example: vde 0878 part 200 (12/92) ?lectromagnetic compatibility of inf ormation technology equipment and telecommunications equipment; immunity of analogue subscriber equipment? the 1.2/50 open circuit voltage and 8/20 short circuit current combination generator is defined in iec 61000-4-5 (03/95) ?lect romagnetic compatibility (emc) - part 4: testing and measurement techniques - section 5: surge immunity test? this generator has a fictiv e output resistance of 2 ? , meaning that dividing the open circuit output voltage by the short circuit output current gives a value of 2 ? (500 a/kv). the combination generator has three testing configurations; directly applied for testing between equipment a.c. supply connecti ons, applied via an external 10 ? resistor for testing between the a.c. supply connections and ground, and applied via an external 40 ? resistor for testing all other lines. for unshielded unsymmetrical data or signalling lines, the combination generator is applied via a 40 ? resistor either between lines or line to ground. for unshielded symmetrical telecommunication lines, the combination generator is applied to all lines via a resistor of n x 40 ? , where n is the number of conductors and the maximum value of external feed resistance is 250 ? . thus, for four conductors, n = 4 and the series resistance is 4 x 40 = 160 ? . for ten conductors, the resistance cannot be 10 x 40 = 400 ? and must be 250 ? . the combina- tion generator is used for short distance lines; long distance lines are tested with the 10/700 generator. when the combination generator is used with a 40 ? , or more, external resistor, the current wave shape is not 8/20, but becomes closer to the open circuit voltage wave shape of 1.2/50. for example, a commercial generator when used with 40 ? produced an 1.4/50 wave shape. the wave shapes of 1.2/50 and 8/20 occur in other generators as well. british telecommunication has a combination generator wit h 1.2/50 voltage and 8/20 current wave shapes, but it has a fictive resistance of 1 ? . itu-t recommendation k.22 ?vervoltage resistibility of equip- ment connected to an isdn t/s bus?(05/95) has a 1.2/50 generator option using only resistive and capacitive elements, figure 3 4. the k.22 generator produces a 1.4/53 open circuit voltage wave. using 25 ? output resistors, gives a single short circuit current output wave shape of 0.8/18 with 26 a/kv and a dual of 0.6/13 with 20 a/kv. these current wave shapes are often rounded to 1/20 and 0.8/14.
march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. applications information 1.2/50 generators (continued) lightning surge (continued) impulse testing tisp7xxxf3 (mv, hv) overvoltage protector series there are 8/20 short circuit current defined generators. these are usually very high current, 10 ka or more and are used for te sting a.c. protectors, primary protection modules and some gas discharge tubes. to verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various imp ulse wave forms. the table in this section shows some common test values. manufacturers are being increasingly required to design in protection coordination. this means that each protector is operated at its design level and currents are diverted through the appropriate protector, e.g. the primary level current through the primary protector and lower levels of current may be diverted through the secondary or inherent equipment protection. without coordination, primary level currents could pass through the equipment only designed to pass secondary level currents. to ensure coordination happens with fixed voltage protect ors, some resistance is normally used between the primary and secondary protection (r1a and r1b, figure 36). the values given in this dat a sheet apply to a 400 v (d.c. sparkover) gas discharge tube primary protector and the appropriate test voltage when the equipment is tested with a primary protector. if the impulse generator current exceeds the protectors current rating, then a series resistance can be used to reduce the cur rent to the protectors rated value to prevent possible failure. the required value of series resistance for a given waveform is given by t he following calculations. first, the minimum total circuit impedance is found by dividing the impulse generators peak voltage by the prote ctors rated current. the impulse generators fictive impedance (generators peak voltage divided by peak short circuit current) is then sub tracted from the minimum total circuit impedance to give the required value of series resistance. in some cases, the equipment will require veri fication over a temperature range. by using the derated waveform values from the thermal information section, the appropriate series resistor v alue can be calculated for ambient temperatures in the range of 0 c to 70 c. figure 34. c 2 30 nf r 1 76 ? c 1 1 f r 2 13 ? sw v c 1 kv k.22 1.2/50 generator c 3 8 nf c 4 8 nf note: some standards replace output capacitors with 25 ? resistors standard peak voltage setting v voltage wa veform s peak current va l u e a current wa veform s tisp7xxxf3 25 c rating a series resistance ? coordination resistance ? (min.) gr-1089-core 2500 2/10 2 x 500 2/10 2 x 190 12 na 1000 10/1000 2 x 100 10/1000 2 x 45 fcc part 68 (march 1998) 1500 10/160 200 10/160 110 6 na 800 10/560 100 10/560 50 8 1000 1500 1500 9/720 ? (single) (dual) 25 37.5 2 x 27 5/320 ? 5/320 ? 4/250 70 70 2 x 95 0 i 31-24 1500 0.5/700 37.5 0.2/310 70 0 na itu-t k.20/k.21 1000 1500 4000 4000 10/700 (single) (single) (dual) 25 37.5 100 2 x 72 5/310 5/310 5/310 4/250 70 70 70 2 x 95 0 0 17 0 na na 6 6 ? fcc part 68 terminology for the waveforms produced by the itu-t recommendation k.21 10/700 impulse generator na = not applicable, primary protection removed or not specified.
march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. applications information protection voltage off-state capacitance capacitance longitudinal balance figure 35. all capacitance measurements in this data sheet are three terminal guarded to allow the designer to accurately assess capacitiv e unbalance effects. simple two terminal capacitance meters (unguarded third terminal) give false readings as the shunt capacitance via the third terminal is included. tisp7xxxf3 (mv, hv) overvoltage protector series the protection voltage, (v (bo) ), increases under lightning surge conditions due to thyristor regeneration. this increase is dependent on the rate of current rise, di/dt, when the tisp device is clamping the voltage in its breakdown region. the v (bo) value under surge conditions can be estimated by multiplying the 50 hz rate v (bo) (250 v/ms) value by the normalized increase at the surges di/dt. an estimate of the di/dt can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance. as an example, the itu-t recommendation k.21 1.5 kv, 10/700 surge has an average dv/dt of 150 v/ s, but, as the rise is exponential, the initial dv/dt is three times higher, being 450 v/ s. the instantaneous generator output resistance is 25 ? . if the equipment has an additional series resistance of 20 ? , the total series resistance becomes 45 ? . the maximum di/dt then can be estimated as 450/45 = 10 a/ s. in practice, the measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope resist ance of the tisp breakdown region. the off-state capacitance of a tisp device is sensitive to junction temperature, t j , and the bias voltage, comprising of the dc voltage, v d , and the ac voltage, v d . all the capacitance values in this data sheet are measured with an ac voltage of 1 vrms. when v d >> v d , the capaci- tance value is independent on the value of v d . up to 10 mhz, the capacitance is essentially independent of frequency. above 10 mhz, the effective capacitance is strongly dependent on connection inductance. for example, a printed wiring (pw) trace of 10 cm could c reate a circuit resonance with the device capacitance in the region of 80 mhz. figure 35 shows a three terminal tisp device with its equivalent ?elta?capacitance. each capacitance, c tg , c rg and c tr , is the true terminal pair capacitance measured with a three terminal or guarded capacitance bridge. if wire r is biased at a larger potenti al than wire t, then c tg > c rg . capacitance c tg is equivalent to a capacitance of c rg in parallel with the capacitive difference of (c tg -c rg ). the line capacitive unbalance is due to (ctg -c rg ) and the capacitance shunting the line is c tr +c rg /2 .
march 1994 - revised march 2006 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. typical circuits tisp7xxxf3 (mv, hv) overvoltage protector series figure 36. protection module figure 37. isdn protection figure 38. line card ring/test protection protected equipment ai7xbp tisp7xxxf3 th3 th2 th1 r1a r1b ring wire tip wire f1a f1b gdtb gdta r1a r1b ai7xbm signal d.c. th3 th2 th1 tisp7150f3 test relay ring relay slic relay test equip- ment ring generator s1a s1b r1a r1b ring wire tip wire th3 th2 th1 th4 th5 slic slic protection ring/test protection over- current protection s2a s2b s3a s3b v bat c1 220 nf ai7xbn tisp6xxxx, tisppblx, 1/2tisp6ntp2 coordi- nation resistance tisp7xxxf3 ?isp?is a trademark of bourns, ltd., a bourns company, and is registered in u.s. patent and trademark office. ?ourns?is a registered trademark of bourns, inc. in the u.s. and other countries.

▲Up To Search▲

Price & Availability of TISP7260F3D

	To Download TISP7260F3D Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .